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LPCVD: Page 4 of 4

Process Hierarchy

  • Bonding
  • Clean
  • Consulting
  • Deposition
  • Evaporation
  • LPCVD
  • Low-stress SiN deposition
  • Miscellaneous deposition
  • Oxidation
  • PECVD
  • Spin casting
  • Sputtering
  • Doping
  • Etch
  • LIGA
  • Lift off
  • Lithography
  • Mask making
  • Metrology
  • Miscellaneous
  • Packaging
  • Polishing
  • Process technologies
  • Thermal
  • Unique capabilities
LPCVD
Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typically performed on both sides of the substrate at the same time.
per page
Process
Low-stress silicon nitride LPCVD ( <200 MPa)
PSG LPCVD
Stoichiometric silicon nitride LPCVD
Undoped polysilicon LPCVD
High temperature silicon dioxide (HTO) LPCVD
LTO LPCVD (both sides)
LTO LPCVD (single side)
Low stress polysilicon LPCVD II (300 MPa)
Low-stress polysilicon LPCVD I (100MPa)
Silicon nitride LPCVD
Undoped polysilicon LPCVD
LPCVD
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