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LPCVD: Page 3 of 4

Process Hierarchy

  • Bonding
  • Clean
  • Consulting
  • Deposition
  • Evaporation
  • LPCVD
  • Low-stress SiN deposition
  • Miscellaneous deposition
  • Oxidation
  • PECVD
  • Spin casting
  • Sputtering
  • Doping
  • Etch
  • LIGA
  • Lift off
  • Lithography
  • Mask making
  • Metrology
  • Miscellaneous
  • Packaging
  • Polishing
  • Process technologies
  • Thermal
  • Unique capabilities
LPCVD
Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typically performed on both sides of the substrate at the same time.
per page
Process
Silicon nitride on HTO
Undoped polysilicon LPCVD
PSG LPCVD
Phosphorus-doped polysilicon LPCVD
Silicon nitride LPCVD
Undoped polysilicon LPCVD
Low Stress silicon nitride LPCVD (300 MPa)
Stoichiometric silicon nitride LPCVD
TEOS LPCVD
Undoped polysilicon LPCVD
Amorphous silicon LPCVD
Amorphous silicon LPCVD (Glass-safe)
Low-stress silicon nitride LPCVD ( <100 MPa)
Low-stress silicon nitride LPCVD ( <350 MPa)
Silicon nitride LPCVD
Undoped polysilicon LPCVD
Amorphous silicon LPCVD
Stoichiometric silicon nitride LPCVD
LTO LPCVD
Low-stress silicon nitride LPCVD ( <120 MPa)
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