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LPCVD: Page 2 of 4

Process Hierarchy

  • Bonding
  • Clean
  • Consulting
  • Deposition
  • Evaporation
  • LPCVD
  • Low-stress SiN deposition
  • Miscellaneous deposition
  • Oxidation
  • PECVD
  • Spin casting
  • Sputtering
  • Doping
  • Etch
  • LIGA
  • Lift off
  • Lithography
  • Mask making
  • Metrology
  • Miscellaneous
  • Packaging
  • Polishing
  • Process technologies
  • Thermal
  • Unique capabilities
LPCVD
Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typically performed on both sides of the substrate at the same time.
per page
Process
Doped poly-SiC LPCVD
Low-stress silicon nitride LPCVD (<300 MPa)
Low-stress silicon nitride LPCVD (<50 MPa)
P-type polygermanium LPCVD
PSG LPCVD
Phosphorus-doped polysilicon LPCVD
Poly-Silicon-Germanium LPCVD
Silicon dioxide LPCVD
Silicon nitride LPCVD
Undoped amorphous silicon LPCVD
Undoped polygermanium LPCVD
Undoped polysilicon LPCVD
HTO on SiN on HTO LPCVD
HTO on silicon nitride
High temperature silicon dioxide (HTO) LPCVD
LTO LPCVD (both sides)
LTO LPCVD (single side)
Low-stress polysilicon LPCVD
SiN on HTO on SiN LPCVD
Silicon nitride LPCVD
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