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MNX

LPCVD: Page 1 of 4

Process Hierarchy

  • Bonding
  • Clean
  • Consulting
  • Deposition
  • Evaporation
  • LPCVD
  • Low-stress SiN deposition
  • Miscellaneous deposition
  • Oxidation
  • PECVD
  • Spin casting
  • Sputtering
  • Doping
  • Etch
  • LIGA
  • Lift off
  • Lithography
  • Mask making
  • Metrology
  • Miscellaneous
  • Packaging
  • Polishing
  • Process technologies
  • Thermal
  • Unique capabilities
LPCVD
Low-pressure chemical vapor deposition (LPCVD) is performed in a reactor at temperatures up to ~900 degC. The deposited film is a product of a chemical reaction between the source gases supplied to the reactor. The process is typically performed on both sides of the substrate at the same time.
per page
Process
LTO LPCVD
Multipoly Recipe #1
Multipoly Recipe #2
P-doped polysilicon LPCVD
PSG LPCVD
Silicon nitride LPCVD
Undoped polysilicon LPCVD
Low Stress silicon nitride LPCVD (<300 MPa)
Silicon dioxide (TEOS) LPCVD
Stoichiometric silicon nitride LPCVD
Undoped polysilicon LPCVD
Low Stress silicon nitride LPCVD (200 MPa)
Stoichiometric silicon nitride LPCVD
Super low stress silicon nitride LPCVD (50 MPa)
LTO LPCVD
Low-stress silicon nitride LPCVD ( <120 MPa)
Low-stress silicon nitride LPCVD ( <200 MPa)
PSG LPCVD
Stoichiometric silicon nitride LPCVD
Undoped polysilicon LPCVD
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