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MNX

Deep RIE: Page 1 of 2

Process Hierarchy

  • Bonding
  • Clean
  • Consulting
  • Deposition
  • Doping
  • Etch
  • Anisotropic etch
  • Deep RIE
  • Isotropic etch
  • Miscellaneous etch
  • Strip
  • LIGA
  • Lift off
  • Lithography
  • Mask making
  • Metrology
  • Miscellaneous
  • Packaging
  • Polishing
  • Process technologies
  • Thermal
  • Unique capabilities
Deep RIE
Deep reactive ion etching is used to etch deep cavities in substrates with relatively high aspect ratio. Most systems systems utilize the so-called "Bosch process", in which a fluor polymer is used to passivate the etching of the sidewalls. Typical aspect ratios of 10-20 can be achieved.
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Process
Advanced silicon dioxide etch (AOE) with photolithography
Silicon DRIE with photolithography (Unaxis VLR 700)
Silicon DRIE with photolithography (PlasmaTherm 770)
Deep RIE (Bosch process)
Deep RIE (Bosch process) with photolithography
Silicon DRIE
Silicon DRIE with anti-footing SOI
Silicon DRIE
Advanced oxide etch
DRIE (PT DSE)
Silicon DRIE (Bosch Process)
Silicon DRIE (Bosch Process) Plasma Therm 770
Silicon DRIE - No Lag (Etch rate independent of feature size)
SiC RIE (AOE)
silicon DRIE (Bosch Process)
Silicon DRIE
Silicon RIE (smooth sidewalls)
Silicon deep RIE
Silicon oxide dry etch
Advanced Oxide Etch (STS-AOE)
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