Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Contact photolithography
Process characteristics:
Alignment side
Alignment side*
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Min feature size
Min feature size*
must be 3 .. 20 µm
3 .. 20 µm
Photoresist polarity
Photoresist polarity*
Photoresist thickness
Thickness of photoresist mold.
Photoresist thickness*
Thickness of photoresist mold.
Wafer diameter(s)
List or range of wafer diameters the tool can accept
Wafer diameter(s)*
List or range of wafer diameters the tool can accept, must be 100 .. 150 mm
100 .. 150 mm
Wafer side
Wafer side*
Alignment tolerance
Registration of CAD data to features on wafer
 5 µm
Batch size 1
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 750 µm
Comments:
  • -Fab to confirm customer supplied mask works for process
    -Cannot guarantee feature size resolution until review of mask.