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Sputtered Metal Film: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Sputtered Metal Film
1
Cr, Ti Single Layer Sputter
2
Al, Al.5%Cu, Cu Single Layer Sputter
Process characteristics:
Layer 1 Material
First material to be deposited in the module. This will form the bottom layer in the film stack.
Layer 1 Material
*
aluminum
aluminum/copper [99.5:0.5]
chromium
copper
titanium
First material to be deposited in the module. This will form the bottom layer in the film stack.
Layer 1 Thickness
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms.
Layer 1 Thickness
*
Å
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms., must be 250 .. 15000 Å
250 .. 15000 Å
Layer 2 Material
The second deposited material
Layer 2 Material
aluminum
aluminum/copper [99.5:0.5]
chromium
copper
none
titanium
The second deposited material
Layer 2 Thickness
Layer 2 Thickness
Å
must be 250 .. 15000 Å
250 .. 15000 Å
Layer 3 Material
The third deposited material
Layer 3 Material
aluminum
aluminum/copper [99.5:0.5]
chromium
copper
none
titanium
The third deposited material
Layer 3 Thickness
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms
Layer 3 Thickness
Å
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms, must be 250 .. 15000 Å
250 .. 15000 Å
Layer 4 Material
The fourth deposited material
Layer 4 Material
aluminum
aluminum/copper [99.5:0.5]
chromium
copper
none
titanium
The fourth deposited material
Layer 4 Thickness
Layer 4 Thickness
Å
must be 250 .. 15000 Å
250 .. 15000 Å
Batch size
25
Wafer size
Wafer size
100 mm
50 .. 76 mm
125 mm
150 mm
200 mm