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Contact photolithography (front-front align) (AZ 9260): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Contact photolithography (front-front align) (AZ 9260)
1
HMDS Prime
Material
HMDS
Thickness
1 nm
on front
2
Photoresist coat (AZ 9260)
Material
AZ 9260
3
Photoresist softbake (AZ 9260)
Material
AZ 9260
on front
4
Contact front-front alignment
on front
5
Contact G-line exposure
Depth
10 µm
on front
6
Photoresist develop (AZ 9260)
Material
AZ 9260
7
Photoresist hardbake (AZ 9260)
Material
AZ 9260
Process characteristics:
Perform hard bake
Perform hard bake
*
yes
no
Resist thickness
Resist thickness
*
µm
must be 5 .. 10 µm
5 .. 10 µm
Excluded materials
gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
line
Field geometry
Shape of field with dimensions characterized by the maximum field size
circle
Magnification
1
Material
AZ 9260
Max field size
90 mm
Min feature size
5 µm
Wafer size
Wafer size
100 mm
150 mm
Comments:
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.