Process Hierarchy

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  Solid phase epitaxy
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Equipment
Comments:
  • Solid phase epitaxy (SPE) is done by first depositing by CVD or other methods an amorphous film of material on the single crystal substrate, which may be done at room temperature. The substrate is then heated at ambient pressure to transform the amorphous film into a single crystal film. The process is typically performed on one side of the substrate at a time.