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Spectrophotometric film thickness measurement: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Electrical metrology
Geometric metrology
Miscellaneous metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Spectrophotometric film thickness measurement
Batch size
1
Materials
polysilicon, polysilicon (phosphorus doped), silicon nitride, silicon dioxide, phosphosilicate glass, zinc oxide
Measurement aspect
thickness
Measurement unit
Ang
Refractive index
1 .. 4
Setup time
30 min
Sides inspected
The sides of the wafer inspected by the process
either
Thickness
0 .. 50 µm
Wafer size
Wafer size
50 .. 150 mm
Equipment
NanoSpec Spectrophotometer
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
recessed platen
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm
Comments:
Film thickness measured at five locations per wafer; normally two test wafers used.